850 nm 2.5 G GaAs PIN Die (PDF, 0.13 MB)
The JDSU single die 850 nm 2.5 Gbps GaAs PIN is designed for high-speed optical data communication applications. The topside illuminated device has a large optical detection area, Ø=120 mm, for increased process tolerance during assembly. The backside mounting surface is electrically isolated from the device electrodes for simplified assembly. The PIN is designed for datacom applications using 850 nm multi-mode 50/125 mm or 62.5/125 mm fiber.
Key Features
- Topside connections for both contacts
- Large topside detection area
- Anti-reflective coating for 850 nm
- Monolithic insulating mounting surface
- Data rates from 622 Mbps to 2.5 Gbps
- Custom physical configuration and performance specification tolerances are available
Benefits
- Large active area provides improved alignment tolerances and ease of barrel attachment
- Small die dimensions allow flexible assembly options
United States
